Broading طیفی روش خط پارامترهای ساختاری تعیین و انتقال الکترونیکی در CdSe اتم مصنوعی
Broading Spectral Line Method for Determination Structural Parameters and Electronic Transitions in CdSe Artificial Atom
نویسندگان |
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اطلاعات مجله |
sciencepg |
سال انتشار |
2017 |
فرمت فایل |
PDF |
کد مقاله |
25854 |
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چکیده (انگلیسی):
Multi layers CdSe artificial atoms system prepared using Spin coating method. Using W-H method, which based on XRD Broading line profile, structural parameters of FTO/CdSe system were calculated. XRD spectrum reveal that CdSe nanoparticles have hexagonal structure, have high strain, show deposition layer on other do more stress and strain (Crystallization size (6.16 A◦), lattice constant C(7.16A◦), effective strain (0.07377 (lin–2 m–4)) between the nano crystals and dislocation (irregular) (26.443×1020 (lin–2 m–4)) were determined), which confirm more later by anther spectroscopic method. By doing fitting between experimental and theoretical absorption using Gaussian profile and Doppler broading line. Different electronic transitions were deduced and other broading curve were studying such as effect of particle size of artificial atoms, with doing more accurate fitting reveals existence of two intensities lines attributed to diffusion layer between FTO and CdSe artificial atoms.
کلمات کلیدی مقاله (فارسی):
CdSe، اتم های مصنوعی، XRD Broading، جذب طیف، داپلر Broading
کلمات کلیدی مقاله (انگلیسی):
CdSe, Artificial Atoms, XRD Broading, Absorption Spectra, Doppler Broading
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