چکیده (انگلیسی):

It has been conducted the analysis of IR-absorption spectra of layered single crystals of GaS and GaS <Yb>, irradiated by gamma-quanta with subsequent annealing. It has been found that, a part of impurity atoms, introduced during the growth of crystals, as well as point defects, formed by irradiation, are located in the interlayer space, that indicates the decrease in the intensity and extension of the half-width bands 188 and 184 cm-1 in the IR spectra. During the annealing (T = 150°C, t = 150 min.) of irradiated samples there occurs an increase of intensity and a decrease of the half-width of these bands, which is caused by partial annealing of radiation defects and the transition of a part of impurity atoms from the interlayer area in the layer.